2SK850 PDF and Equivalents Search

 

2SK850 Specs and Replacement

Type Designator: 2SK850

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SC65

2SK850 substitution

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2SK850 datasheet

 ..1. Size:57K  toshiba
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2SK850

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 ..2. Size:218K  inchange semiconductor
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2SK850

isc N-Channel MOSFET Transistor 2SK850 DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V D... See More ⇒

 9.1. Size:62K  toshiba
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2SK850

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 9.2. Size:121K  nec
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2SK850

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Detailed specifications: AOY514, AOY516, AOY526, AOY528, 2SJ154, 2SK1101-01MR, 2SK3515-01MR, 2SK436, NCEP15T14, 2SK3918, 2SK3918-ZK, 2SK2651-01MR, 2SK2638-01MR, 2SK1916-01R, 2SK1772, 2SK1070, 2SJ450

Keywords - 2SK850 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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