2SK850 Datasheet and Replacement
Type Designator: 2SK850
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SC65
2SK850 substitution
2SK850 Datasheet (PDF)
2sk850.pdf

isc N-Channel MOSFET Transistor 2SK850DESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D
Datasheet: AOY514 , AOY516 , AOY526 , AOY528 , 2SJ154 , 2SK1101-01MR , 2SK3515-01MR , 2SK436 , IRFP450 , 2SK3918 , 2SK3918-ZK , 2SK2651-01MR , 2SK2638-01MR , 2SK1916-01R , 2SK1772 , 2SK1070 , 2SJ450 .
History: UT2301Z | AU8N60S | STB40N60M2 | SWB088R08E8T | FHF4N60A | SIHF22N65E | APT1201R6BVFRG
Keywords - 2SK850 MOSFET datasheet
2SK850 cross reference
2SK850 equivalent finder
2SK850 lookup
2SK850 substitution
2SK850 replacement
History: UT2301Z | AU8N60S | STB40N60M2 | SWB088R08E8T | FHF4N60A | SIHF22N65E | APT1201R6BVFRG



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