2SJ450 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ450

Código: UY

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 9 nS

Conductancia de drenaje-sustrato (Cd): 72 pF

Resistencia drenaje-fuente RDS(on): 0.85 Ohm

Empaquetado / Estuche: UPAK

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2SJ450 Datasheet (PDF)

1.1. 2sj450.pdf Size:46K _hitachi

2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features • Low on-resistance. • Low drive power • High speed switching • 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from http://www.digchip.com at this page 2SJ450 Absolute Maximum Rati

5.1. 2sj455.pdf Size:177K _update-mosfet

2SJ455 Ordering number : EN5441 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ455 Applications Features • Low ON-state resistance. • High-speed switching. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ455-applied equipment. • High density surface mount a

5.2. 2sj451.pdf Size:111K _renesas

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features � Low on-resistance. � Low drive power � 2.5 V gate drive device. � Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note: Marking is �ZK��. Absolute Maximum Ratin

5.3. 2sj45.pdf Size:2127K _nec