Справочник MOSFET. 2SJ450

 

2SJ450 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SJ450

Маркировка: UY

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 1 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 9 ns

Выходная емкость (Cd): 72 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.85 Ohm

Тип корпуса: UPAK

Аналог (замена) для 2SJ450

 

 

2SJ450 Datasheet (PDF)

1.1. 2sj450.pdf Size:46K _hitachi

2SJ450
2SJ450

2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features • Low on-resistance. • Low drive power • High speed switching • 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from http://www.digchip.com at this page 2SJ450 Absolute Maximum Rati

5.1. 2sj455.pdf Size:177K _update-mosfet

2SJ450
2SJ450

2SJ455 Ordering number : EN5441 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ455 Applications Features • Low ON-state resistance. • High-speed switching. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ455-applied equipment. • High density surface mount a

5.2. 2sj455.pdf Size:177K _sanyo

2SJ450
2SJ450

2SJ455 Ordering number : EN5441 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ455 Applications Features • Low ON-state resistance. • High-speed switching. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ455-applied equipment. • High density surface mount a

 5.3. 2sj451.pdf Size:111K _renesas

2SJ450
2SJ450

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note: Marking is “ZK–”. Absol

5.4. 2sj45.pdf Size:2127K _nec

2SJ450
2SJ450



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