2SJ450 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ450
Маркировка: UY
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток (Uds): 60 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Максимально допустимый постоянный ток стока (Id): 1 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 72 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.85 Ohm
Тип корпуса: UPAK
2SJ450 Datasheet (PDF)
1.1. 2sj450.pdf 
Size:46K _hitachi
2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st. Edition Application High speed power switching Features • Low on-resistance. • Low drive power • High speed switching • 2.5 V gate drive device. Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S This datasheet has been downloaded from http://www.digchip.com at this page 2SJ450 Absolute Maximum Rati
5.1. 2sj455.pdf Size:177K _update-mosfet
2SJ455 Ordering number : EN5441 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ455 Applications Features • Low ON-state resistance. • High-speed switching. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ455-applied equipment. • High density surface mount a
5.2. 2sj455.pdf Size:177K _sanyo
2SJ455 Ordering number : EN5441 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ455 Applications Features • Low ON-state resistance. • High-speed switching. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ455-applied equipment. • High density surface mount a
5.3. 2sj451.pdf Size:111K _renesas
2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note: Marking is “ZK–”. Absol
5.4. 2sj45.pdf Size:2127K _nec
Другие MOSFET... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .
Список транзисторов
Обновления
MOSFET: IPP45N04S4L-08 | IPI45N04S4L-08 | IPP12CNE8NG | IPI12CNE8NG | IPD12CNE8NG | IPP08CNE8NG | IPI08CNE8NG | IPI06CN10NG | IPP054NE8NG | IPI05CNE8NG | IPP050N06NG | SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F |