APT4025BN Todos los transistores

 

APT4025BN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT4025BN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 310 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 563 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: TO247

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APT4025BN datasheet

 8.1. Size:72K  apt
 apt4020bvfrg.pdf pdf_icon

APT4025BN

400V 23A 0.20 APT4020BVFR APT4020SVFR APT4020BVFRG* APT4020SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR FREDFET POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVF

 8.2. Size:51K  apt
 apt4020.pdf pdf_icon

APT4025BN

D TO-247 G APT4020BN 400V 26.0A 0.20 S APT4025BN 400V 23.0A 0.25 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 4020BN 4025BN UNIT VDSS Drain-Source Voltage 400 400 Volts ID Continuous Drain Current @ TC = 25 C 26 23 Amps IDM Pulsed Drain Current 1 104 92

 8.3. Size:64K  apt
 apt4020bvr.pdf pdf_icon

APT4025BN

APT4020BVR 400V 23A 0.200 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 8.4. Size:51K  apt
 apt4020bn.pdf pdf_icon

APT4025BN

D TO-247 G APT4020BN 400V 26.0A 0.20 S APT4025BN 400V 23.0A 0.25 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 4020BN 4025BN UNIT VDSS Drain-Source Voltage 400 400 Volts ID Continuous Drain Current @ TC = 25 C 26 23 Amps IDM Pulsed Drain Current 1 104 92

MOSTRAR MÁS

Otros transistores... APT10035LFLL , APT10035B2LL , APT10035LLL , APT10035JFLL , APT10035JLL , APT1003RSLL , APT1003RBLL , APT1003RKLL , IRFZ48N , APT40M90JN , APT10040B2VFR , APT10040B2VR , APT10045B2FLL , APT10045B2LL , APT10045JFLL , APT10045JLL , APT1004R2KN .

History: 2SK2223-01R | H5N50U | AP3N3R3MT | MS3N80

 

 

 

 

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