All MOSFET. APT4025BN Datasheet

 

APT4025BN MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT4025BN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 563 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO247

 APT4025BN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT4025BN Datasheet (PDF)

 8.1. Size:72K  apt
apt4020bvfrg.pdf

APT4025BN
APT4025BN

400V 23A 0.20APT4020BVFR APT4020SVFRAPT4020BVFRG* APT4020SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFRFREDFETPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVF

 8.2. Size:51K  apt
apt4020.pdf

APT4025BN
APT4025BN

DTO-247GAPT4020BN 400V 26.0A 0.20SAPT4025BN 400V 23.0A 0.25POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 4020BN 4025BN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Drain Current @ TC = 25C26 23AmpsIDM Pulsed Drain Current 1104 92

 8.3. Size:64K  apt
apt4020bvr.pdf

APT4025BN
APT4025BN

APT4020BVR400V 23A 0.200POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 8.4. Size:51K  apt
apt4020bn.pdf

APT4025BN
APT4025BN

DTO-247GAPT4020BN 400V 26.0A 0.20SAPT4025BN 400V 23.0A 0.25POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 4020BN 4025BN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Drain Current @ TC = 25C26 23AmpsIDM Pulsed Drain Current 1104 92

 8.5. Size:375K  inchange semiconductor
apt4020bvfr.pdf

APT4025BN
APT4025BN

isc N-Channel MOSFET Transistor APT4020BVFRFEATURESDrain Current I =23A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: APT10035LFLL , APT10035B2LL , APT10035LLL , APT10035JFLL , APT10035JLL , APT1003RSLL , APT1003RBLL , APT1003RKLL , AO3407 , APT40M90JN , APT10040B2VFR , APT10040B2VR , APT10045B2FLL , APT10045B2LL , APT10045JFLL , APT10045JLL , APT1004R2KN .

History: STV7NA40 | 2N7002BKV

 

 
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