APT10050B2LC MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

APT10050B2LC datasheet

..1. Size:68K apt
apt10050b2lc.pdf pdf_icon

APT10050B2LC APT10050LLC 1000V 21A 0.500W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fa

4.1. Size:107K apt
apt10050b2vfr.pdf pdf_icon

APT10050B2VFR APT10050LVFR 1000V 21A 0.500W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifica

4.2. Size:59K apt
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APT10050B2VR 1000V 21A 0.500 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

4.3. Size:67K apt
apt10050b2 lvfr c.pdf pdf_icon

APT10050B2VFR APT10050LVFR 1000V 21A 0.500 B2VFR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR