All MOSFET. APT10050B2LC Datasheet

 

APT10050B2LC MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT10050B2LC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 170 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TMAX

 APT10050B2LC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT10050B2LC Datasheet (PDF)

 ..1. Size:68K  apt
 apt10050b2lc.pdf

APT10050B2LC APT10050B2LC

APT10050B2LCAPT10050LLC1000V 21A 0.500WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fa

 4.1. Size:107K  apt
 apt10050b2vfr.pdf

APT10050B2LC APT10050B2LC

APT10050B2VFRAPT10050LVFR1000V 21A 0.500WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifica

 4.2. Size:59K  apt
 apt10050b2vr.pdf

APT10050B2LC APT10050B2LC

APT10050B2VR1000V 21A 0.500POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 4.3. Size:67K  apt
 apt10050b2 lvfr c.pdf

APT10050B2LC APT10050B2LC

APT10050B2VFRAPT10050LVFR1000V 21A 0.500B2VFRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR

 4.4. Size:67K  apt
 apt10050b2vfrg apt10050lvfrg.pdf

APT10050B2LC APT10050B2LC

APT10050B2VFRAPT10050LVFR1000V 21A 0.500B2VFRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: ZXMN6A11DN8 | ZXMN3F30FH

 

 
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