2N7002L Todos los transistores

 ..1. Size:92K  onsemi
 2n7002l.pdf

2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features AEC Qualified http //onsemi.com PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.5 W @ 10 V, 60 V 115 mA 500 mA MAXIMUM RATINGS Rating Symbol Value Unit N-Channel Drain-Source Voltage VDSS 60 Vdc 3 Drain-Gate Voltage (RGS = 1.0 MW) V

 ..2. Size:100K  onsemi
 2n7002l 2v7002l.pdf

2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features 2V Prefix for Automotive and Other Applications Requiring Unique http //onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable (2V7002L) V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 7.5 W @ 10 V, 60 V 115 mA 500 mA

 ..3. Size:90K  onsemi
 2v7002l 2n7002l.pdf

2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features 2V Prefix for Automotive and Other Applications Requiring Site and http //onsemi.com Change Controls AEC Qualified - 2V7002L V(BR)DSS RDS(on) MAX ID MAX PPAP Capable - 2V7002L These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.5 W @ 10 V, 60 V 115 mA Compliant 500 mA N-Channel

 0.1. Size:98K  motorola
 2n7002lt1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN N Channel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current Con

 0.2. Size:94K  motorola
 2n7002lt1rev2.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN N Channel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current Con

 0.3. Size:160K  utc
 2n7002ll.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate 1 voltages. This device is suitable for use as a load switch or in 2 PWM applications. FEATURES SOT-23-3 (JEDEC TO-236) * RDS(ON) = 7.5

 0.4. Size:370K  willas
 2n7002lt1.pdf

FM120-M WILLAS THRU 2N7002LT1 Small Signal MOSFET 115 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

 0.5. Size:1325K  blue-rocket-elect
 br2n7002lk2.pdf

BR2N7002LK2 Rev.C Oct.-2023 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV,HF Product. / Applications

 0.6. Size:524K  lrc
 l2n7002lt1g s-l2n7002lt1g.pdf

L2N7002LT1G S-L2N7002LT1G Small Signal MOSFET 115 mAmps, 60 Volts N Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. ESD Protected 1000V 2.

 0.7. Size:340K  lrc
 l2n7002lt1g.pdf

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002LT1G 115 mAmps, 60 Volts N Channel SOT 23 3 We declare that the material of product 1 compliance with RoHS requirements. 2 ESD Protected 1000V CASE 318, STYLE 21 SOT 23 (TO 236AB) MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vd