All MOSFET. 2N7002L Datasheet

 

2N7002L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7002L

Marking Code: 702*

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.225 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 0.075 A

Maximum Junction Temperature (Tj): 150 °C

Turn-on Time (ton): 20 nS

Drain-Source Capacitance (Cd): 25 pF

Maximum Drain-Source On-State Resistance (Rds): 7.5 Ohm

Package: SOT23

2N7002L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N7002L Datasheet (PDF)

0.1. 2n7002lt1rev2.pdf Size:94K _motorola

2N7002L
2N7002L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINN Channel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMU

0.2. 2n7002lt1.pdf Size:98K _motorola

2N7002L
2N7002L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINN Channel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMU

 0.3. 2n7002l.pdf Size:92K _onsemi

2N7002L
2N7002L

2N7002LSmall Signal MOSFET60 V, 115 mA, N-Channel SOT-23Features AEC Qualifiedhttp://onsemi.com PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.5 W @ 10 V,60 V 115 mA500 mAMAXIMUM RATINGSRating Symbol Value UnitN-ChannelDrain-Source Voltage VDSS 60 Vdc3Drain-Gate Voltage (RGS = 1.0 MW) V

0.4. 2v7002l 2n7002l.pdf Size:90K _onsemi

2N7002L
2N7002L

2N7002L, 2V7002LSmall Signal MOSFET60 V, 115 mA, N-Channel SOT-23Features 2V Prefix for Automotive and Other Applications Requiring Site andhttp://onsemi.comChange Controls AEC Qualified - 2V7002LV(BR)DSS RDS(on) MAX ID MAX PPAP Capable - 2V7002L These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.5 W @ 10 V,60 V 115 mACompliant 500 mAN-Channel

 0.5. 2n7002ll.pdf Size:160K _utc

2N7002L
2N7002L

UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET DESCRIPTION 3The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate 1voltages. This device is suitable for use as a load switch or in 2PWM applications. FEATURES SOT-23-3(JEDEC TO-236)* RDS(ON) = 7.5

0.6. 2n7002lt1.pdf Size:370K _willas

2N7002L
2N7002L

FM120-M WILLASTHRU2N7002LT1Small Signal MOSFET 115 mAmps, 60 VoltsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

0.7. l2n7002lt1g.pdf Size:340K _lrc

2N7002L
2N7002L

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002LT1G115 mAmps, 60 VoltsNChannel SOT233 We declare that the material of product 1compliance with RoHS requirements.2 ESD Protected:1000VCASE 318, STYLE 21SOT 23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vd

Datasheet: 2N6968JANTXV , 2N6969 , 2N6969JANTX , 2N6969JANTXV , 2N7000 , 2N7000P , 2N7001 , 2N7002 , IRF1404 , 2N7004 , 2N7005 , 2N7006 , 2N7007 , 2N7008 , 2N7012 , 2N7013 , 2N7014 .

 

 
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