APT10086SLC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT10086SLC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 370 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 350 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.86 Ohm
Encapsulados: D3PAK
Búsqueda de reemplazo de APT10086SLC MOSFET
- Selecciónⓘ de transistores por parámetros
APT10086SLC datasheet
apt10086svr.pdf
APT10086SVR 1000V 13A 0.860 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower
apt10086bvfr.pdf
APT10086BVFR 1000V 13A 0.860 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te
apt10086blc.pdf
APT10086BLC APT10086SLC 1000V 13A 0.860W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast sw
apt10086bvr.pdf
APT10086BVR 1000V 13A 0.860 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
Otros transistores... APT10050B2VFR , APT10050JLC , BUZ50C , APT10078BFLL , APT10078SFLL , APT10078BLL , APT10078SLL , APT10086BLC , IRF3205 , APT10090BFLL , APT10090SFLL , APT10090BLL , APT10090SLL , APT10M09B2VFR , APT10M09B2VR , APT10M30AVR , APT11N80BC3 .
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