Справочник MOSFET. APT10086SLC

 

APT10086SLC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT10086SLC
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 370 W
   Предельно допустимое напряжение сток-исток |Uds|: 1000 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 13 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 350 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.86 Ohm
   Тип корпуса: D3PAK

 Аналог (замена) для APT10086SLC

 

 

APT10086SLC Datasheet (PDF)

 5.1. Size:69K  apt
 apt10086svr.pdf

APT10086SLC APT10086SLC

APT10086SVR1000V 13A 0.860POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 6.1. Size:68K  apt
 apt10086bvfr.pdf

APT10086SLC APT10086SLC

APT10086BVFR1000V 13A 0.860POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te

 6.2. Size:34K  apt
 apt10086blc.pdf

APT10086SLC APT10086SLC

APT10086BLCAPT10086SLC1000V 13A 0.860WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast sw

 6.3. Size:66K  apt
 apt10086bvr.pdf

APT10086SLC APT10086SLC

APT10086BVR1000V 13A 0.860POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

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