APT11N80KC3 Todos los transistores

 

APT11N80KC3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT11N80KC3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO220
 

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APT11N80KC3 Datasheet (PDF)

 ..1. Size:157K  apt
 apt11n80kc3.pdf pdf_icon

APT11N80KC3

APT11N80KC3800V 11A 0.450Super Junction MOSFETTO-220COOLMOSPower Semiconductors Ultra low RDS(ON)GDS Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-220 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11N80KC3 UNITVDSS Drain-Source Voltage800

 0.1. Size:166K  apt
 apt11n80kc3g.pdf pdf_icon

APT11N80KC3

APT11N80KC3 800V 11A 0.450Super Junction MOSFET TO-220 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg GD Avalanche Energy Rated S Extreme dv/dt RatedMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Symbol Parameter APT11N80KC3 UNITVDSSDrain-Source Voltage 800 VoltsID Continuous Drain Current @ TC = 25C1

 6.1. Size:158K  apt
 apt11n80bc3g.pdf pdf_icon

APT11N80KC3

APT11N80BC3800V 11A 0.45Super Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11N80BC3 UNITVDSS Drain-Source Voltage800 VoltsID

 6.2. Size:157K  apt
 apt11n80bc3.pdf pdf_icon

APT11N80KC3

APT11N80BC3800V 11A 0.45Super Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11N80BC3 UNITVDSS Drain-Source Voltage800 VoltsID

MOSTRAR MÁS

Otros transistores... APT10090BFLL , APT10090SFLL , APT10090BLL , APT10090SLL , APT10M09B2VFR , APT10M09B2VR , APT10M30AVR , APT11N80BC3 , IRF640 , APT1201R2BLL , APT1201R2SLL , APT1201R4BLL , APT1201R4SLL , APT1201R5BVFR , APT1201R5SVFR , APT1201R6BVFR , APT12031JLL .

History: APT1003RKLL | BUZ901DP | CHM003TGP

 

 
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