APT12060B2VFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT12060B2VFR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 650 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Encapsulados: TMAX
Búsqueda de reemplazo de APT12060B2VFR MOSFET
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APT12060B2VFR datasheet
apt12060b2vfr.pdf
APT12060B2VFR APT12060LVFR 1200V 20A 0.600 POWER MOS V T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster S
apt12060b2vfrg apt12060lvfrg.pdf
APT12060B2VFR APT12060LVFR 1200V 20A 0.600 POWER MOS V T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster S
apt12060b2vr.pdf
APT12060B2VR APT12060LVR 1200V 20A 0.600W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati
apt12067b2llg apt12067lllg.pdf
APT12067B2LL APT12067LLL 1200V 18A 0.670 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL
Otros transistores... APT12031JLL, APT12040JLL, APT12040JVFR, APT12040L2LL, APT12045L2VFR, APT12045L2VR, APT12057B2LL, APT12057JLL, IRFP250N, APT12060B2VR, APT12067B2LL, APT12067JLL, APT12080B2VFR, APT12080JVFR, APT14050JVFR, APT17N80BC3, APT17N80SC3
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