APT12060B2VFR. Аналоги и основные параметры
Наименование производителя: APT12060B2VFR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 650 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TMAX
Аналог (замена) для APT12060B2VFR
- подборⓘ MOSFET транзистора по параметрам
APT12060B2VFR даташит
apt12060b2vfr.pdf
APT12060B2VFR APT12060LVFR 1200V 20A 0.600 POWER MOS V T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster S
apt12060b2vfrg apt12060lvfrg.pdf
APT12060B2VFR APT12060LVFR 1200V 20A 0.600 POWER MOS V T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster S
apt12060b2vr.pdf
APT12060B2VR APT12060LVR 1200V 20A 0.600W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati
apt12067b2llg apt12067lllg.pdf
APT12067B2LL APT12067LLL 1200V 18A 0.670 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL
Другие MOSFET... APT12031JLL , APT12040JLL , APT12040JVFR , APT12040L2LL , APT12045L2VFR , APT12045L2VR , APT12057B2LL , APT12057JLL , IRFP250N , APT12060B2VR , APT12067B2LL , APT12067JLL , APT12080B2VFR , APT12080JVFR , APT14050JVFR , APT17N80BC3 , APT17N80SC3 .
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