APT14050JVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT14050JVFR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 694 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 1150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Paquete / Cubierta: SOT227
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APT14050JVFR Datasheet (PDF)
apt14050jvfr.pdf

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APT14M120B APT14M120S 1200V, 14A, 1.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance
apt14m100b apt14m100s.pdf

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apt14f100b apt14f100s.pdf

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Otros transistores... APT12057B2LL , APT12057JLL , APT12060B2VFR , APT12060B2VR , APT12067B2LL , APT12067JLL , APT12080B2VFR , APT12080JVFR , K4145 , APT17N80BC3 , APT17N80SC3 , APT20M10JFLL , APT20M10JLL , APT20M16B2FLL , APT20M16B2LL , APT20M18B2VFR , APT20M18B2VR .
History: MMBT7002 | JBE083NS | IXTH12N70X2 | JMH65R980AKQ | ME2324D | DMG4712SSS | NTD15N06-001
History: MMBT7002 | JBE083NS | IXTH12N70X2 | JMH65R980AKQ | ME2324D | DMG4712SSS | NTD15N06-001



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