APT14050JVFR Todos los transistores

 

APT14050JVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT14050JVFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 694 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: SOT227
     - Selección de transistores por parámetros

 

APT14050JVFR Datasheet (PDF)

 ..1. Size:131K  apt
apt14050jvfr.pdf pdf_icon

APT14050JVFR

APT14050JVFR1400V 23A 0.500POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Fas

 9.1. Size:212K  microsemi
apt14m120b apt14m120s.pdf pdf_icon

APT14050JVFR

APT14M120B APT14M120S 1200V, 14A, 1.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance

 9.2. Size:116K  microsemi
apt14m100b apt14m100s.pdf pdf_icon

APT14050JVFR

APT14M100B APT14M100S 1000V, 14A, 0.88 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance

 9.3. Size:212K  microsemi
apt14f100b apt14f100s.pdf pdf_icon

APT14050JVFR

APT14F100B APT14F100S 1000V, 14A, 0.98 Max, trr 240nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BLP012N08-T | BUK7Y153-100E | SE8830T | 2SK3880 | VN2110 | FW202 | IMW120R140M1H

 

 
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