APT14050JVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT14050JVFR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 694 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 1150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: SOT227
Búsqueda de reemplazo de APT14050JVFR MOSFET
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APT14050JVFR datasheet
apt14050jvfr.pdf
APT14050JVFR 1400V 23A 0.500 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Fas
apt14m120b apt14m120s.pdf
APT14M120B APT14M120S 1200V, 14A, 1.10 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance
apt14m100b apt14m100s.pdf
APT14M100B APT14M100S 1000V, 14A, 0.88 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance
apt14f100b apt14f100s.pdf
APT14F100B APT14F100S 1000V, 14A, 0.98 Max, trr 240ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.
Otros transistores... APT12057B2LL, APT12057JLL, APT12060B2VFR, APT12060B2VR, APT12067B2LL, APT12067JLL, APT12080B2VFR, APT12080JVFR, 2N7002, APT17N80BC3, APT17N80SC3, APT20M10JFLL, APT20M10JLL, APT20M16B2FLL, APT20M16B2LL, APT20M18B2VFR, APT20M18B2VR
History: AP9972GI-HF
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