APT14050JVFR. Аналоги и основные параметры
Наименование производителя: APT14050JVFR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 694 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1400 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 1150 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
Тип корпуса: SOT227
Аналог (замена) для APT14050JVFR
- подборⓘ MOSFET транзистора по параметрам
APT14050JVFR даташит
apt14050jvfr.pdf
APT14050JVFR 1400V 23A 0.500 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Fas
apt14m120b apt14m120s.pdf
APT14M120B APT14M120S 1200V, 14A, 1.10 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance
apt14m100b apt14m100s.pdf
APT14M100B APT14M100S 1000V, 14A, 0.88 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance
apt14f100b apt14f100s.pdf
APT14F100B APT14F100S 1000V, 14A, 0.98 Max, trr 240ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.
Другие IGBT... APT12057B2LL, APT12057JLL, APT12060B2VFR, APT12060B2VR, APT12067B2LL, APT12067JLL, APT12080B2VFR, APT12080JVFR, 2N7002, APT17N80BC3, APT17N80SC3, APT20M10JFLL, APT20M10JLL, APT20M16B2FLL, APT20M16B2LL, APT20M18B2VFR, APT20M18B2VR
History: AP2306CGN-HF | FQA6N70 | RU1H60R | SSM6P49NU | RU1H80R | NCE65T180F
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