APT30M30B2LL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT30M30B2LL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 690 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 1870 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: TMAX

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APT30M30B2LL datasheet

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 apt30m30b2ll.pdf pdf_icon

APT30M30B2LL

APT30M30B2LL APT30M30LLL 300V 100A 0.030W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

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 apt30m30b2ll.pdf pdf_icon

APT30M30B2LL

isc N-Channel MOSFET Transistor APT30M30B2LL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

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 apt30m30b2llg apt30m30lllg.pdf pdf_icon

APT30M30B2LL

APT30M30B2LL APT30M30LLL 300V 100A 0.030 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

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APT30M30B2LL

APT30M30B2FLL APT30M30LFLL 300V 100A 0.030 R B2FLL POWER MOS 7 FREDFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses

MOSTRAR MÁS

Otros transistores... APT20M20JLL, APT20M34BFLL, APT20M34BLL, APT20M36BFLL, APT20M36BLL, 2SK310, APT20N60BC3, APT30M17JLL, NCEP15T14, APT30M30JLL, APT30M36B2LL, APT30M36JLL, APT30M40B2VR, APT30M61BLL, APT30M75BLL, APT31N80JC3, APT34N80B2C3