All MOSFET. APT30M30B2LL Datasheet

 

APT30M30B2LL MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT30M30B2LL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 690 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1870 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TMAX

 APT30M30B2LL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT30M30B2LL Datasheet (PDF)

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 apt30m30b2ll.pdf

APT30M30B2LL APT30M30B2LL

APT30M30B2LLAPT30M30LLL300V 100A 0.030WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

 ..2. Size:376K  inchange semiconductor
 apt30m30b2ll.pdf

APT30M30B2LL APT30M30B2LL

isc N-Channel MOSFET Transistor APT30M30B2LLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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 apt30m30b2llg apt30m30lllg.pdf

APT30M30B2LL APT30M30B2LL

APT30M30B2LLAPT30M30LLL300V 100A 0.030RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

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 apt30m30b2fllg apt30m30lfll.pdf

APT30M30B2LL APT30M30B2LL

APT30M30B2FLLAPT30M30LFLL300V 100A 0.030R B2FLL POWER MOS 7 FREDFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses

 4.2. Size:376K  inchange semiconductor
 apt30m30b2fll.pdf

APT30M30B2LL APT30M30B2LL

isc N-Channel MOSFET Transistor APT30M30B2FLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDWS86368-F085 | 2N7061 | PUM6K31N

 

 
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