APT31N80JC3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT31N80JC3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 833 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 31 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 2050 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm

Encapsulados: SOT227

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APT31N80JC3 datasheet

 ..1. Size:173K  apt
 apt31n80jc3.pdf pdf_icon

APT31N80JC3

APT31N80JC3 800V 31A 0.145 Super Junction MOSFET COOLMOS Power Semiconductors Ultra low RDS(ON) "UL Recognized" Low Miller Capacitance ISOTOP Ultra Low Gate Charge, Qg D Avalanche Energy Rated G N-Channel Enhancement Mode Popular SOT-227 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Paramete

 8.1. Size:265K  apt
 apt31n60bcsg apt31n60scsg.pdf pdf_icon

APT31N80JC3

FINAL DATA SHEET 600V 31A 0.100 APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET (B) COOLMOS Power Semiconductors D3PAK Ultra Low RDS(ON) (S) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated Extreme dv/dt Rated G Popular TO-247 or Surface M

 9.1. Size:194K  microsemi
 apt31m100b2 apt31m100l.pdf pdf_icon

APT31N80JC3

APT31M100B2 APT31M100L 1000V, 32A, 0.38 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and

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