All MOSFET. APT31N80JC3 Datasheet

 

APT31N80JC3 MOSFET. Datasheet pdf. Equivalent

Type Designator: APT31N80JC3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 833 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 2050 pF

Maximum Drain-Source On-State Resistance (Rds): 0.145 Ohm

Package: SOT227

APT31N80JC3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

APT31N80JC3 Datasheet (PDF)

1.1. apt31n80jc3.pdf Size:173K _apt

APT31N80JC3
APT31N80JC3

APT31N80JC3 Ω 800V 31A 0.145Ω Ω Ω Ω Super Junction MOSFET COOLMOS Power Semiconductors • Ultra low RDS(ON) "UL Recognized" • Low Miller Capacitance ISOTOP® • Ultra Low Gate Charge, Qg D • Avalanche Energy Rated G • N-Channel Enhancement Mode • Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Paramete

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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