APT31N80JC3 Datasheet and Replacement
Type Designator: APT31N80JC3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 833 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 2050 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
Package: SOT227
APT31N80JC3 substitution
APT31N80JC3 Datasheet (PDF)
apt31n80jc3.pdf

APT31N80JC3800V 31A 0.145Super Junction MOSFETCOOLMOSPower Semiconductors Ultra low RDS(ON)"UL Recognized" Low Miller CapacitanceISOTOP Ultra Low Gate Charge, QgD Avalanche Energy RatedG N-Channel Enhancement Mode Popular SOT-227 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Paramete
apt31n60bcsg apt31n60scsg.pdf

FINAL DATA SHEET 600V 31A 0.100 APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET (B)COOLMOSPower SemiconductorsD3PAK Ultra Low RDS(ON) (S) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated Extreme dv/dt RatedG Popular TO-247 or Surface M
apt31m100b2 apt31m100l.pdf

APT31M100B2 APT31M100L 1000V, 32A, 0.38 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and
Datasheet: APT30M17JLL , APT30M30B2LL , APT30M30JLL , APT30M36B2LL , APT30M36JLL , APT30M40B2VR , APT30M61BLL , APT30M75BLL , 2SK3568 , APT34N80B2C3 , APT4525AN , APT47N60BC3 , APT5010B2FLL , APT5010B2LC , APT5010B2LL , APT5010JFLL , APT5010JLC .
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