APT4525AN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT4525AN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 522 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de MOSFET APT4525AN

APT4525AN Datasheet (PDF)

..1. Size:370K apt
apt4525an.pdf

9.1. Size:375K apt
apt4530an apt5025an apt5030an.pdf

9.2. Size:457K apt
apt45gp120jdq220.pdf

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

9.3. Size:436K apt
apt45gp120b2dq2g.pdf

TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2(G) 1200V APT45GP120B2DQ2 APT45GP120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

9.4. Size:196K apt
apt45gp120b2df2.pdf

APT45GP120B2DF2TYPICAL PERFORMANCE CURVESAPT45GP120B2DF21200VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCC Low Conduction Loss 10

9.5. Size:205K apt
apt45gp120jdf2.pdf

TYPICAL PERFORMANCE CURVES APT45GP120JDF2APT45GP120JDF21200VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency "UL Recognized"ISOTOPswitchmode power supplies.C Low Conduction Loss

9.6. Size:457K apt
apt45gp120jdq2.pdf

9.7. Size:97K apt
apt45gp120j.pdf

APT45GP120J1200VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency "UL Recognized"ISOTOPswitchmode power supplies.C Low Conduction Loss 50 kHz operation @ 800V, 16A Low Gate

9.8. Size:102K apt
apt45gp120bg.pdf

APT45GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.E Low Conduction Loss 100 kHz operation @ 800V, 16AC Low Gate Charge

9.9. Size:88K apt
apt45gp120b.pdf

9.10. Size:213K microsemi
apt45m100j.pdf

APT45M100J 1000V, 45A, 0.18 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Liste

Recientemente añadidas las descripciónes de los transistores: