APT5017BLC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT5017BLC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 370 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 580 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm

Encapsulados: TO247

 Búsqueda de reemplazo de APT5017BLC MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT5017BLC datasheet

 ..1. Size:34K  apt
 apt5017blc.pdf pdf_icon

APT5017BLC

APT5017BLC APT5017SLC 500V 30A 0.170W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast switc

 6.1. Size:60K  apt
 apt5017bvr.pdf pdf_icon

APT5017BLC

APT5017BVR 500V 30A 0.170 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 6.2. Size:62K  apt
 apt5017bvfr.pdf pdf_icon

APT5017BLC

APT5017BVFR 500V 30A 0.170 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 6.3. Size:375K  inchange semiconductor
 apt5017bvr.pdf pdf_icon

APT5017BLC

isc N-Channel MOSFET Transistor APT5017BVR FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

MOSTRAR MÁS

Otros transistores... APT5010JLL, APT5010JVRU2, APT5010JVRU3, APT5014B2LC, APT5014BFLL, APT5014BLL, APT5016BFLL, APT5016BLL, P60NF06, APT5018BFLL, APT5018BLL, APT5020BLC, APT5024BFLL, APT5024SVR, APT5027BVR, APT50M50JFLL, APT50M50JLC