APT5017BLC Specs and Replacement

Type Designator: APT5017BLC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO247

APT5017BLC substitution

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APT5017BLC datasheet

 ..1. Size:34K  apt
 apt5017blc.pdf pdf_icon

APT5017BLC

APT5017BLC APT5017SLC 500V 30A 0.170W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast switc... See More ⇒

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 apt5017bvr.pdf pdf_icon

APT5017BLC

APT5017BVR 500V 30A 0.170 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower ... See More ⇒

 6.2. Size:62K  apt
 apt5017bvfr.pdf pdf_icon

APT5017BLC

APT5017BVFR 500V 30A 0.170 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test... See More ⇒

 6.3. Size:375K  inchange semiconductor
 apt5017bvr.pdf pdf_icon

APT5017BLC

isc N-Channel MOSFET Transistor APT5017BVR FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

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Detailed specifications: APT5010JLL, APT5010JVRU2, APT5010JVRU3, APT5014B2LC, APT5014BFLL, APT5014BLL, APT5016BFLL, APT5016BLL, P60NF06, APT5018BFLL, APT5018BLL, APT5020BLC, APT5024BFLL, APT5024SVR, APT5027BVR, APT50M50JFLL, APT50M50JLC

Keywords - APT5017BLC MOSFET specs

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