HUF75321S3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75321S3ST
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 709 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
Paquete / Cubierta: TP262AB
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HUF75321S3ST Datasheet (PDF)
huf75321p3 huf75321s3s.pdf
HUF75321P3, HUF75321S3SData Sheet December 200135A, 55V, 0.034 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 35A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves the
huf75321p3.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
huf75321d3s.pdf
HUF75321D3Swww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n
Otros transistores... HUF75309P3 , HUF75309T3ST , HUF75321D3 , HUF75321D3S , HUF75321D3ST , HUF75321P3 , HUF75321S3 , HUF75321S3S , IRFB3607 , HUF75329D3 , HUF75329D3S , HUF75329G3 , HUF75329P3 , HUF75329S3 , HUF75329S3S , HUF75329S3ST , HUF75332G3 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918