HUF75321S3ST
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF75321S3ST
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 70
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 709
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032
Ohm
Package: TP262AB
HUF75321S3ST
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF75321S3ST
Datasheet (PDF)
3.1. Size:235K fairchild semi
huf75321p3 huf75321s3s.pdf 
HUF75321P3, HUF75321S3SData Sheet December 200135A, 55V, 0.034 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 35A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves the
6.1. Size:785K onsemi
huf75321p3.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.2. Size:798K cn vbsemi
huf75321d3s.pdf
HUF75321D3Swww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n
Datasheet: HUF75309P3
, HUF75309T3ST
, HUF75321D3
, HUF75321D3S
, HUF75321D3ST
, HUF75321P3
, HUF75321S3
, HUF75321S3S
, STP80NF70
, HUF75329D3
, HUF75329D3S
, HUF75329G3
, HUF75329P3
, HUF75329S3
, HUF75329S3S
, HUF75329S3ST
, HUF75332G3
.
