APT50M65B2LL Todos los transistores

 

APT50M65B2LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT50M65B2LL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 690 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 67 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 1430 pF

Resistencia drenaje-fuente RDS(on): 0.065 Ohm

Empaquetado / Estuche: TMAX

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APT50M65B2LL Datasheet (PDF)

1.1. apt50m65b2llg apt50m65lllg.pdf Size:98K _update_mosfet

APT50M65B2LL
APT50M65B2LL

APT50M65B2LL APT50M65LLL Ω 500V 67A 0.065Ω Ω Ω Ω R B2LL POWER MOS 7 MOSFET T-MaxTM Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses LLL

1.2. apt50m65b2ll.pdf Size:68K _apt

APT50M65B2LL
APT50M65B2LL

APT50M65B2LL APT50M65LLL 500V 67A 0.065W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s

 1.3. apt50m65b2fll.pdf Size:63K _apt

APT50M65B2LL
APT50M65B2LL

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio

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