APT50M65B2LL. Аналоги и основные параметры
Наименование производителя: APT50M65B2LL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 690 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 67 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 1430 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
Тип корпуса: TMAX
Аналог (замена) для APT50M65B2LL
- подборⓘ MOSFET транзистора по параметрам
APT50M65B2LL даташит
apt50m65b2ll.pdf
APT50M65B2LL APT50M65LLL 500V 67A 0.065W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s
apt50m65b2ll.pdf
isc N-Channel MOSFET Transistor APT50M65B2LL FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p
apt50m65b2llg apt50m65lllg.pdf
APT50M65B2LL APT50M65LLL 500V 67A 0.065 R B2LL POWER MOS 7 MOSFET T-MaxTM Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL
apt50m65b2fll.pdf
APT50M65B2FLL APT50M65LFLL 500V 67A 0.065W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptio
Другие IGBT... APT5027BVR, APT50M50JFLL, APT50M50JLC, APT50M50L2FLL, APT50M50L2LL, APT50M60L2VFR, APT50M60L2VR, APT50M65B2FLL, K2611, APT50M65JFLL, APT50M65JLL, APT50M75B2FLL, APT50M75B2LL, APT50M75JFLL, APT50M75JLL, APT50M75JLLU2, APT50M80B2LC
History: AOTL190A60
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