APT50M80B2VFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT50M80B2VFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 58 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 1160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TMAX

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APT50M80B2VFR datasheet

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 apt50m80b2vfr.pdf pdf_icon

APT50M80B2VFR

APT50M80B2VFR 500V 58A 0.080W POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

 ..2. Size:376K  inchange semiconductor
 apt50m80b2vfr.pdf pdf_icon

APT50M80B2VFR

isc N-Channel MOSFET Transistor APT50M80B2VFR FEATURES Drain Current I = 58A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.08 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 0.1. Size:94K  apt
 apt50m80b2vfrg apt50m80lvfrg.pdf pdf_icon

APT50M80B2VFR

APT50M80B2VFR APT50M80LVFR 500V 58A 0.080 POWER MOS V FREDFET TM T-Max Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 3.1. Size:36K  apt
 apt50m80b2vr.pdf pdf_icon

APT50M80B2VFR

APT50M80B2VR APT50M80LVR 500V 58A 0.080W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificatio

MOSTRAR MÁS

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