Справочник MOSFET. APT50M80B2VFR

 

APT50M80B2VFR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT50M80B2VFR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 58 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 360 nC
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 1160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TMAX

 Аналог (замена) для APT50M80B2VFR

 

 

APT50M80B2VFR Datasheet (PDF)

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 apt50m80b2vfr.pdf

APT50M80B2VFR APT50M80B2VFR

APT50M80B2VFR500V 58A 0.080WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

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 apt50m80b2vfr.pdf

APT50M80B2VFR APT50M80B2VFR

isc N-Channel MOSFET Transistor APT50M80B2VFRFEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.08(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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 apt50m80b2vfrg apt50m80lvfrg.pdf

APT50M80B2VFR APT50M80B2VFR

APT50M80B2VFRAPT50M80LVFR500V 58A 0.080POWER MOS V FREDFETTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

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 apt50m80b2vr.pdf

APT50M80B2VFR APT50M80B2VFR

APT50M80B2VRAPT50M80LVR500V 58A 0.080WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio

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 apt50m80b2vrg apt50m80lvrg.pdf

APT50M80B2VFR APT50M80B2VFR

APT50M80B2VRAPT50M80LVR500V 58A 0.080POWER MOS VTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Identical

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