APT50M85B2VFR Todos los transistores

 

APT50M85B2VFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT50M85B2VFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: TMAX
 

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APT50M85B2VFR Datasheet (PDF)

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apt50m85b2vfr.pdf pdf_icon

APT50M85B2VFR

APT50M85B2VFRAPT50M85LVFR500V 56A 0.085WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

 0.1. Size:137K  apt
apt50m85b2vfrg apt50m85lvfrg.pdf pdf_icon

APT50M85B2VFR

APT50M85B2VFRAPT50M85LVFR500V 56A 0.085B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout

 3.1. Size:36K  apt
apt50m85b2vr.pdf pdf_icon

APT50M85B2VFR

APT50M85B2VRAPT50M85LVR500V 56A 0.085WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio

 6.1. Size:74K  apt
apt50m85jvr.pdf pdf_icon

APT50M85B2VFR

APT50M85JVR500V 50A 0.085POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

Otros transistores... APT50M75B2LL , APT50M75JFLL , APT50M75JLL , APT50M75JLLU2 , APT50M80B2LC , APT50M80B2VFR , APT50M80B2VR , APT50M80JLC , IRF740 , APT50M85B2VR , APT5560AN , APT6010B2LL , APT6010JFLL , APT6010JLL , APT6011B2VFR , APT6011B2VR , APT6011LVFR .

History: HAT2198WP | NDP7050 | AON6282 | P2804BVG | DAMI360N150 | ME4920 | RQK0302GGDQS

 

 
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