APT50M85B2VFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT50M85B2VFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 1160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm

Encapsulados: TMAX

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APT50M85B2VFR datasheet

 ..1. Size:39K  apt
 apt50m85b2vfr.pdf pdf_icon

APT50M85B2VFR

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical

 0.1. Size:137K  apt
 apt50m85b2vfrg apt50m85lvfrg.pdf pdf_icon

APT50M85B2VFR

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout

 3.1. Size:36K  apt
 apt50m85b2vr.pdf pdf_icon

APT50M85B2VFR

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificatio

 6.1. Size:74K  apt
 apt50m85jvr.pdf pdf_icon

APT50M85B2VFR

APT50M85JVR 500V 50A 0.085 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

MOSTRAR MÁS

Otros transistores... APT50M75B2LL, APT50M75JFLL, APT50M75JLL, APT50M75JLLU2, APT50M80B2LC, APT50M80B2VFR, APT50M80B2VR, APT50M80JLC, IRF740, APT50M85B2VR, APT5560AN, APT6010B2LL, APT6010JFLL, APT6010JLL, APT6011B2VFR, APT6011B2VR, APT6011LVFR