All MOSFET. APT50M85B2VFR Datasheet

 

APT50M85B2VFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT50M85B2VFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 360 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TMAX

 APT50M85B2VFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT50M85B2VFR Datasheet (PDF)

 ..1. Size:39K  apt
 apt50m85b2vfr.pdf

APT50M85B2VFR APT50M85B2VFR

APT50M85B2VFRAPT50M85LVFR500V 56A 0.085WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

 0.1. Size:137K  apt
 apt50m85b2vfrg apt50m85lvfrg.pdf

APT50M85B2VFR APT50M85B2VFR

APT50M85B2VFRAPT50M85LVFR500V 56A 0.085B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout

 3.1. Size:36K  apt
 apt50m85b2vr.pdf

APT50M85B2VFR APT50M85B2VFR

APT50M85B2VRAPT50M85LVR500V 56A 0.085WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio

 6.1. Size:74K  apt
 apt50m85jvr.pdf

APT50M85B2VFR APT50M85B2VFR

APT50M85JVR500V 50A 0.085POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 6.2. Size:76K  apt
 apt50m85jvfr.pdf

APT50M85B2VFR APT50M85B2VFR

APT50M85JVFR500V 50A 0.085POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 6.3. Size:40K  apt
 apt50m85lvr.pdf

APT50M85B2VFR APT50M85B2VFR

APT50M85B2VRAPT50M85LVR500V 56A 0.085WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HYG035N02KA1C2 | NTMS4176PR2G

 

 
Back to Top