APT6011B2VFR Todos los transistores

 

APT6011B2VFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT6011B2VFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 990 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: TMAX

 Búsqueda de reemplazo de MOSFET APT6011B2VFR

 

APT6011B2VFR Datasheet (PDF)

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 apt6011b2vfr.pdf pdf_icon

APT6011B2VFR

APT6011B2VFR 600V 49A 0.110W POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te

 0.1. Size:147K  apt
 apt6011b2vfrg apt6011lvfrg.pdf pdf_icon

APT6011B2VFR

APT6011B2VFR APT6011LVFR 600V 49A 0.110 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 4.1. Size:143K  apt
 apt6011b2vr.pdf pdf_icon

APT6011B2VFR

APT6011B2VR APT6011LVR 600V 49A 0.110 B2VR POWER MOS V MOSFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR

 7.1. Size:37K  apt
 apt6011lvr.pdf pdf_icon

APT6011B2VFR

APT6011B2VR APT6011LVR 600V 49A 0.110W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifications

MOSTRAR MÁS

Otros transistores... APT50M80B2VR , APT50M80JLC , APT50M85B2VFR , APT50M85B2VR , APT5560AN , APT6010B2LL , APT6010JFLL , APT6010JLL , IRFP460 , APT6011B2VR , APT6011LVFR , APT6011LVR , APT6013B2FLL , APT6013B2LL , APT6013JFLL , APT6013JLL , APT6015LVFR .

 

 
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