APT6011B2VFR Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT6011B2VFR
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 49 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 990 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: TMAX
APT6011B2VFR Datasheet (PDF)
apt6011b2vfr.pdf

APT6011B2VFR600V 49A 0.110WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te
apt6011b2vfrg apt6011lvfrg.pdf

APT6011B2VFRAPT6011LVFR600V 49A 0.110B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt6011b2vr.pdf

APT6011B2VRAPT6011LVR600V 49A 0.110B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR
apt6011lvr.pdf

APT6011B2VRAPT6011LVR600V 49A 0.110WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifications
Другие MOSFET... APT50M80B2VR , APT50M80JLC , APT50M85B2VFR , APT50M85B2VR , APT5560AN , APT6010B2LL , APT6010JFLL , APT6010JLL , IRF640 , APT6011B2VR , APT6011LVFR , APT6011LVR , APT6013B2FLL , APT6013B2LL , APT6013JFLL , APT6013JLL , APT6015LVFR .
History: SI1317DL | UPA2764T1A
History: SI1317DL | UPA2764T1A



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