APT6011B2VR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6011B2VR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: TMAX

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APT6011B2VR datasheet

 ..1. Size:143K  apt
 apt6011b2vr.pdf pdf_icon

APT6011B2VR

APT6011B2VR APT6011LVR 600V 49A 0.110 B2VR POWER MOS V MOSFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR

 4.1. Size:147K  apt
 apt6011b2vfrg apt6011lvfrg.pdf pdf_icon

APT6011B2VR

APT6011B2VFR APT6011LVFR 600V 49A 0.110 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 4.2. Size:33K  apt
 apt6011b2vfr.pdf pdf_icon

APT6011B2VR

APT6011B2VFR 600V 49A 0.110W POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te

 7.1. Size:37K  apt
 apt6011lvr.pdf pdf_icon

APT6011B2VR

APT6011B2VR APT6011LVR 600V 49A 0.110W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifications

MOSTRAR MÁS

Otros transistores... APT50M80JLC, APT50M85B2VFR, APT50M85B2VR, APT5560AN, APT6010B2LL, APT6010JFLL, APT6010JLL, APT6011B2VFR, IRFZ44, APT6011LVFR, APT6011LVR, APT6013B2FLL, APT6013B2LL, APT6013JFLL, APT6013JLL, APT6015LVFR, APT6017B2FLL