All MOSFET. APT6011B2VR Datasheet

 

APT6011B2VR Datasheet and Replacement


   Type Designator: APT6011B2VR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 49 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TMAX
 

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APT6011B2VR Datasheet (PDF)

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APT6011B2VR

APT6011B2VRAPT6011LVR600V 49A 0.110B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR

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APT6011B2VR

APT6011B2VFRAPT6011LVFR600V 49A 0.110B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 4.2. Size:33K  apt
 apt6011b2vfr.pdf pdf_icon

APT6011B2VR

APT6011B2VFR600V 49A 0.110WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te

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 apt6011lvr.pdf pdf_icon

APT6011B2VR

APT6011B2VRAPT6011LVR600V 49A 0.110WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifications

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Datasheet: APT50M80JLC , APT50M85B2VFR , APT50M85B2VR , APT5560AN , APT6010B2LL , APT6010JFLL , APT6010JLL , APT6011B2VFR , IRFZ44 , APT6011LVFR , APT6011LVR , APT6013B2FLL , APT6013B2LL , APT6013JFLL , APT6013JLL , APT6015LVFR , APT6017B2FLL .

History: JCS730C | 6N65KL-TMS-T | PTA26N60 | 2SK3663 | AM110N06-08P | SVGP103R0NP7 | 2SK2135

Keywords - APT6011B2VR MOSFET datasheet

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