APT6011B2VR Specs and Replacement

Type Designator: APT6011B2VR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 49 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TMAX

APT6011B2VR substitution

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APT6011B2VR datasheet

 ..1. Size:143K  apt
 apt6011b2vr.pdf pdf_icon

APT6011B2VR

APT6011B2VR APT6011LVR 600V 49A 0.110 B2VR POWER MOS V MOSFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR... See More ⇒

 4.1. Size:147K  apt
 apt6011b2vfrg apt6011lvfrg.pdf pdf_icon

APT6011B2VR

APT6011B2VFR APT6011LVFR 600V 49A 0.110 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

 4.2. Size:33K  apt
 apt6011b2vfr.pdf pdf_icon

APT6011B2VR

APT6011B2VFR 600V 49A 0.110W POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te... See More ⇒

 7.1. Size:37K  apt
 apt6011lvr.pdf pdf_icon

APT6011B2VR

APT6011B2VR APT6011LVR 600V 49A 0.110W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifications... See More ⇒

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Detailed specifications: APT50M80JLC, APT50M85B2VFR, APT50M85B2VR, APT5560AN, APT6010B2LL, APT6010JFLL, APT6010JLL, APT6011B2VFR, IRFZ44, APT6011LVFR, APT6011LVR, APT6013B2FLL, APT6013B2LL, APT6013JFLL, APT6013JLL, APT6015LVFR, APT6017B2FLL

Keywords - APT6011B2VR MOSFET specs

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