APT6025SVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6025SVR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 370 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 525 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
Paquete / Cubierta: D3PAK
Búsqueda de reemplazo de APT6025SVR MOSFET
APT6025SVR datasheet
apt6025svr.pdf
APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower Le
apt6025bvfrg apt6025svfrg.pdf
APT6025BVFR APT6025SVFR 600V 25A 0.250 POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Re
apt6025svfr.pdf
APT6025BVFR APT6025SVFR 600V 25A 0.250 POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Re
apt6025bfllg apt6025sfllg.pdf
APT6025BFLL APT6025SFLL 600V 24A 0.250 BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL
Otros transistores... APT6017JFLL , APT6017JLL , APT6021BFLL , APT6021BLL , APT6025BFLL , APT6025BLL , APT6025BVFR , APT6025SVFR , IRF630 , APT6029BFLL , APT6029BLL , APT6030BVFR , APT6030SVFR , APT6030SVR , APT6035BVFR , APT6038BFLL , APT6038BLL .
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