APT6025SVR Todos los transistores

 

APT6025SVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6025SVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 370 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 275 nC

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 525 pF

Resistencia drenaje-fuente RDS(on): 0.25 Ohm

Empaquetado / Estuche: D3PAK

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APT6025SVR Datasheet (PDF)

1.1. apt6025bvfrg apt6025svfrg.pdf Size:116K _update_mosfet

APT6025SVR
APT6025SVR

APT6025BVFR APT6025SVFR Ω 600V 25A 0.250Ω Ω Ω Ω POWER MOS V® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Re

1.2. apt6025svfr.pdf Size:113K _apt

APT6025SVR
APT6025SVR

APT6025BVFR APT6025SVFR Ω 600V 25A 0.250Ω Ω Ω Ω POWER MOS V® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Re

 1.3. apt6025svr.pdf Size:59K _apt

APT6025SVR
APT6025SVR

APT6025SVR 600V 25A 0.250W POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower Le

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