HUF75329S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75329S3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 94 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 49 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 60 nC
Resistencia drenaje-fuente RDS(on): 0.024 Ohm
Empaquetado / Estuche: TO262AA
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HUF75329S3 Datasheet (PDF)
1.1. huf75329g3 huf75329p3 huf75329s3s.pdf 
Size:252K _fairchild_semi
HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024? are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on the web at: www.
2.1. huf75329d3st.pdf Size:660K _update_mosfet
HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 mΩ • 20A, 55V These N-Channel power MOSFETs are manufactured using • Simulation Models the innovative UltraFET process. This advanced process - Temperature Compensated PSPICE® and SABER™ technology achieves the lowest possible on-resistance per Models silicon area, resulting in ou
2.2. huf75329d3-s.pdf Size:225K _fairchild_semi
HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the lowest pos
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