APT6040BVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6040BVFR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 250 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 170 nC
Tiempo de elevación (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 305 pF
Resistencia drenaje-fuente RDS(on): 0.4 Ohm
Empaquetado / Estuche: TO247
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APT6040BVFR Datasheet (PDF)
1.1. apt6040bvfr.pdf 
Size:113K _apt
APT6040BVFR APT6040SVFR Ω 600V 16A 0.400Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR
1.2. apt6040bvr.pdf Size:57K _apt
APT6040BVR APT6040SVR Ω 600V 16A 0.400Ω Ω Ω Ω BVR POWER MOS V® D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® SVR also achieves faster switching speeds through optimized gate layout. D • Fast
2.1. apt6040bn.pdf Size:50K _apt
D TO-247 G APT6040BN 600V 18.0A 0.40Ω S APT6045BN 600V 17.0A 0.45Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6040BN 6045BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25°C 18 17 Amps IDM Pulsed Drain Current 1 72 68 V
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