APT8018L2VFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8018L2VFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 833 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 43 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 1180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO264

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APT8018L2VFR datasheet

 ..1. Size:131K  apt
 apt8018l2vfr.pdf pdf_icon

APT8018L2VFR

APT8018L2VFR 800V 43A 0.180 L2VFR POWER MOS V FREDFET TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Pa

 0.1. Size:133K  apt
 apt8018l2vfrg.pdf pdf_icon

APT8018L2VFR

APT8018L2VFR 800V 43A 0.180 L2VFR POWER MOS V FREDFET TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Pa

 4.1. Size:77K  apt
 apt8018l2vr.pdf pdf_icon

APT8018L2VFR

APT8018L2VR 800V 43A 0.180W POWER MOS V TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche Tested D

 7.1. Size:60K  apt
 apt8018jn.pdf pdf_icon

APT8018L2VFR

D G APT8018JN 800V 40A 0.18 S "UL Recognized" File No. E145592 (S) ISOTOP POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 8018JN UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25 C 40 Amps IDM, lLM Pulsed D

MOSTRAR MÁS

Otros transistores... APT60M80L2VR, APT77N60JC3, APT8011JFLL, APT8011JLL, APT8014JFLL, APT8014JLL, APT8014L2FLL, APT8014L2LL, STP80NF70, APT8018L2VR, APT8020B2FLL, APT8020B2LL, APT8020JFLL, APT8020JLL, APT8024B2FLL, APT8024B2LL, APT8024B2VFR