APT8018L2VFR Specs and Replacement

Type Designator: APT8018L2VFR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 833 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 1180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO264

APT8018L2VFR substitution

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APT8018L2VFR datasheet

 ..1. Size:131K  apt
 apt8018l2vfr.pdf pdf_icon

APT8018L2VFR

APT8018L2VFR 800V 43A 0.180 L2VFR POWER MOS V FREDFET TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Pa... See More ⇒

 0.1. Size:133K  apt
 apt8018l2vfrg.pdf pdf_icon

APT8018L2VFR

APT8018L2VFR 800V 43A 0.180 L2VFR POWER MOS V FREDFET TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Pa... See More ⇒

 4.1. Size:77K  apt
 apt8018l2vr.pdf pdf_icon

APT8018L2VFR

APT8018L2VR 800V 43A 0.180W POWER MOS V TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche Tested D ... See More ⇒

 7.1. Size:60K  apt
 apt8018jn.pdf pdf_icon

APT8018L2VFR

D G APT8018JN 800V 40A 0.18 S "UL Recognized" File No. E145592 (S) ISOTOP POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 8018JN UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25 C 40 Amps IDM, lLM Pulsed D... See More ⇒

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Detailed specifications: APT60M80L2VR, APT77N60JC3, APT8011JFLL, APT8011JLL, APT8014JFLL, APT8014JLL, APT8014L2FLL, APT8014L2LL, STP80NF70, APT8018L2VR, APT8020B2FLL, APT8020B2LL, APT8020JFLL, APT8020JLL, APT8024B2FLL, APT8024B2LL, APT8024B2VFR

Keywords - APT8018L2VFR MOSFET specs

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