APT8020B2LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT8020B2LL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 690 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 975 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TMAX

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APT8020B2LL Datasheet (PDF)

..1. Size:69K apt
apt8020b2ll.pdf

APT8020B2LLAPT8020LLL800V 38A 0.200WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

0.1. Size:157K apt
apt8020b2llg apt8020lllg.pdf

APT8020B2LLAPT8020LLL800V 38A 0.200B2LLR POWER MOS 7 MOSFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)LLLand Qg. Power MOS 7 combines lower conduction and switching losses

5.1. Size:71K apt
apt8020b2fll.pdf

APT8020B2FLLAPT8020LFLL800V 38A 0.200WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

5.2. Size:251K microsemi
apt8020b2fllg apt8020lfllg.pdf

APT8020B2FLLAPT8020LFLL800V 38A 0.220RB2FLL POWER MOS 7 FREDFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)LFLLand Qg. Power MOS 7 combines lower conduction and switching los

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