APT8020B2LL. Аналоги и основные параметры
Наименование производителя: APT8020B2LL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 690 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 38 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 975 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
Тип корпуса: TMAX
Аналог (замена) для APT8020B2LL
- подборⓘ MOSFET транзистора по параметрам
APT8020B2LL даташит
apt8020b2ll.pdf
APT8020B2LL APT8020LLL 800V 38A 0.200W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi
apt8020b2llg apt8020lllg.pdf
APT8020B2LL APT8020LLL 800V 38A 0.200 B2LL R POWER MOS 7 MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) LLL and Qg. Power MOS 7 combines lower conduction and switching losses
apt8020b2fll.pdf
APT8020B2FLL APT8020LFLL 800V 38A 0.200W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona
apt8020b2fllg apt8020lfllg.pdf
APT8020B2FLL APT8020LFLL 800V 38A 0.220 R B2FLL POWER MOS 7 FREDFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) LFLL and Qg. Power MOS 7 combines lower conduction and switching los
Другие IGBT... APT8011JLL, APT8014JFLL, APT8014JLL, APT8014L2FLL, APT8014L2LL, APT8018L2VFR, APT8018L2VR, APT8020B2FLL, AO4407, APT8020JFLL, APT8020JLL, APT8024B2FLL, APT8024B2LL, APT8024B2VFR, APT8024B2VR, APT8024JFLL, APT8024JLL
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH
Popular searches
2n2102 | mj15003g | oc75 transistor | irfp260m | 2sc1213 | a1491 transistor | 2sc897 | 2sa818




