APT8024B2VFR Todos los transistores

 

APT8024B2VFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8024B2VFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 625 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 33 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 750 pF

Resistencia drenaje-fuente RDS(on): 0.24 Ohm

Empaquetado / Estuche: TMAX

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APT8024B2VFR Datasheet (PDF)

1.1. apt8024b2fllg.pdf Size:245K _update_mosfet

APT8024B2VFR
APT8024B2VFR

APT8024B2FLL APT8024LFLL Ω 800V 31A 0.260Ω Ω Ω Ω R B2FLL POWER MOS 7 FREDFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses a

1.2. apt8024b2llg.pdf Size:161K _update_mosfet

APT8024B2VFR
APT8024B2VFR

APT8024B2LL APT8024LLL Ω 800V 31A 0.240Ω Ω Ω Ω R B2LL POWER MOS 7 MOSFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses LLL

 1.3. apt8024b2vfrg apt8024lvfrg.pdf Size:137K _update-mosfet

APT8024B2VFR
APT8024B2VFR

APT8024B2VFR APT8024LVFR Ω 800V 33A 0.240Ω Ω Ω Ω B2VFR POWER MOS V® FREDFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

1.4. apt8024b2vfr.pdf Size:39K _apt

APT8024B2VFR
APT8024B2VFR

APT8024B2VFR APT8024LVFR 800V 33A 0.240W B2VFR POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVFR • Identical Sp

 1.5. apt8024b2vr.pdf Size:37K _apt

APT8024B2VFR
APT8024B2VFR

APT8024B2VR APT8024LVR 800V 33A 0.240W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specifications

1.6. apt8024b2fll.pdf Size:70K _apt

APT8024B2VFR
APT8024B2VFR

APT8024B2FLL APT8024LFLL 800V 31A 0.240W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

1.7. apt8024b2ll.pdf Size:69K _apt

APT8024B2VFR
APT8024B2VFR

APT8024B2LL APT8024LLL 800V 31A 0.240W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

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