All MOSFET. APT8024B2VFR Datasheet

 

APT8024B2VFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT8024B2VFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 390 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TMAX

 APT8024B2VFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT8024B2VFR Datasheet (PDF)

 ..1. Size:39K  apt
 apt8024b2vfr.pdf

APT8024B2VFR APT8024B2VFR

APT8024B2VFRAPT8024LVFR800V 33A 0.240WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical Sp

 0.1. Size:137K  apt
 apt8024b2vfrg apt8024lvfrg.pdf

APT8024B2VFR APT8024B2VFR

APT8024B2VFRAPT8024LVFR800V 33A 0.240B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 4.1. Size:37K  apt
 apt8024b2vr.pdf

APT8024B2VFR APT8024B2VFR

APT8024B2VRAPT8024LVR800V 33A 0.240WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifications

 5.1. Size:70K  apt
 apt8024b2fll.pdf

APT8024B2VFR APT8024B2VFR

APT8024B2FLLAPT8024LFLL800V 31A 0.240WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

 5.2. Size:161K  apt
 apt8024b2llg apt8024lllg.pdf

APT8024B2VFR APT8024B2VFR

APT8024B2LLAPT8024LLL800V 31A 0.240RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

 5.3. Size:69K  apt
 apt8024b2ll.pdf

APT8024B2VFR APT8024B2VFR

APT8024B2LLAPT8024LLL800V 31A 0.240WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

 5.4. Size:245K  microsemi
 apt8024b2fllg apt8024lfllg.pdf

APT8024B2VFR APT8024B2VFR

APT8024B2FLLAPT8024LFLL800V 31A 0.260RB2FLL POWER MOS 7 FREDFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesa

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History: TPP65R360M | HUF75329P3 | IRF6708S2 | 2SJ609

 

 
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