APT8075BVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8075BVFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 260 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO247

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APT8075BVFR datasheet

 ..1. Size:72K  apt
 apt8075bvfr.pdf pdf_icon

APT8075BVFR

APT8075BVFR 800V 12A 0.750 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 0.1. Size:52K  apt
 apt8075bvfrg.pdf pdf_icon

APT8075BVFR

APT8075BVFR 800V 12A 0.750 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 5.1. Size:62K  apt
 apt8075bvr.pdf pdf_icon

APT8075BVFR

APT8075BVR 800V 12A 0.750 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 5.2. Size:376K  inchange semiconductor
 apt8075bvr.pdf pdf_icon

APT8075BVFR

isc N-Channel MOSFET Transistor APT8075BVR FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.75 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

MOSTRAR MÁS

Otros transistores... APT8024B2VFR, APT8024B2VR, APT8024JFLL, APT8024JLL, APT8043BFLL, APT8043BLL, APT8052BFLL, APT8052BLL, IRF520, APT94N60L2C3, 2SK2642-01MR, 2SK3502-01MR, 2SK3673-01MR, 2SK3677-01MR, 2SK3679-01MR, 2SK2058, 2SK2728