HUF75332S3S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75332S3S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 145 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Paquete / Cubierta: TO263AB
Búsqueda de reemplazo de HUF75332S3S MOSFET
HUF75332S3S datasheet
huf75332s3st.pdf
HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs 60A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models a
huf75332p3.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
huf75332.pdf
HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 File Number 4489.3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs 60A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. Models This advanced process technology - SPICE and SABER Thermal Impedance
Otros transistores... HUF75329D3S , HUF75329G3 , HUF75329P3 , HUF75329S3 , HUF75329S3S , HUF75329S3ST , HUF75332G3 , HUF75332P3 , BS170 , HUF75333G3 , HUF75333P3 , HUF75333S3 , HUF75333S3S , HUF75333S3ST , HUF75337G3 , HUF75337P3 , HUF75337S3S .
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