HUF75332S3S
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF75332S3S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 145
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019
Ohm
Package:
TO263AB
HUF75332S3S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF75332S3S
Datasheet (PDF)
0.1. Size:305K fairchild semi
huf75332s3st.pdf
HUF75332G3, HUF75332P3, HUF75332S3SData Sheet January 200560A, 55V, 0.019 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 60A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models a
6.1. Size:827K onsemi
huf75332p3.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.2. Size:214K intersil
huf75332.pdf
HUF75332G3, HUF75332P3, HUF75332S3SData Sheet June 1999 File Number 4489.360A, 55V, 0.019 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 60A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the- Temperature Compensated PSPICE and SABERinnovative UltraFET process.ModelsThis advanced process technology- SPICE and SABER Thermal Impedance
Datasheet: HUF75329D3S
, HUF75329G3
, HUF75329P3
, HUF75329S3
, HUF75329S3S
, HUF75329S3ST
, HUF75332G3
, HUF75332P3
, 4435
, HUF75333G3
, HUF75333P3
, HUF75333S3
, HUF75333S3S
, HUF75333S3ST
, HUF75337G3
, HUF75337P3
, HUF75337S3S
.