STU330S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STU330S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 21 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TO252 DPAK

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STU330S datasheet

 ..1. Size:102K  samhop
 stu330s std330s.pdf pdf_icon

STU330S

STU/D330S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 28 @ VGS=10V Suface Mount Package. 30V 20A 38 @ VGS=4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=25 C unless o

 9.1. Size:149K  samhop
 stu336s std336s.pdf pdf_icon

STU330S

Gre r r P Pr Pr Pro STU/D336S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 5.6 @ VGS=10V TO-252 and TO-251 Package. 55A 30V 9 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK (

 9.2. Size:149K  samhop
 stu339s std339s.pdf pdf_icon

STU330S

Gre r r P Pr Pr Pro STU/D339S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9.6 @ VGS=10V TO-252 and TO-251 Package. 40A 30V 15 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK (

 9.3. Size:149K  samhop
 stu334s std334s.pdf pdf_icon

STU330S

Gre r r P Pr Pr Pro STU/D334S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 4.7 @ VGS=10V TO-252 and TO-251 Package. 60A 30V 6.8 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK

MOSTRAR MÁS

Otros transistores... STU36L01A, STU35N10, STU35L01HA, STU35L01A, STU35L01, STU339S, STU336S, STU334S, IRF540N, STU328S, STU302S, STU25L01, STU2455PLS, STU2240NL, STU20N15, STU20L01A, STU20L01