STS8235 Todos los transistores

STS8235 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor F E ATUR E S PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). RDS(ON) (m ) Max VDSS ID R ugged and reliable. 36 @ VGS=4.5V S urface Mount Package. 30V 4.5A 46 @ VGS=2.5V E S D Protected. D1 D2 S OT26 Top View S 1 G1 6 1 G 1 G 2 D1/D2 2 5 D1/D2 3

Green Product STS8216 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20 @ VGS=4.0V Suface Mount Package. 20V 6A 27 @ VGS=2.5V ESD Protected. D1 D2 SOT 26 Top View S1 G1 6 1 G 1 G 2 D1/D2 2 5 D1/D2 3

Gre r r P Pr Pr Pro STS8217 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16.5 @ VGS=4.0V Suface Mount Package. 17 @ VGS=3.7V 24V 7A ESD Protected. 18 @ VGS=3.1V 27 @ VGS=2.5V D1 D2 TSOT 26 Top View S1

Green Product STS8202 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27 @ VGS=4.5V Suface Mount Package. 28 @ VGS=4.0V ESD Protected. 20V 5A 30 @ VGS=3.7V 33 @ VGS=3.1V 38 @ VGS=2.5V D1 D2 TSOT 26 Top Vi

Gre r r P Pr Pr Pro STS8215 a S mHop Microelectronics C orp. Ver 2.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 24.5 @ VGS=4.5V Suface Mount Package. 25.5 @ VGS=4.0V ESD Protected. 20V 5.5A 27.5 @ VGS=3.7V 30.5 @ VGS=3.1V 36.5 @ VGS=2.5V D1 D

Gre r r P Pr Pr Pro STS8205 a S mHop Microelectronics C orp. Ver 4.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27.5 @ VGS=4.5V Suface Mount Package. 28.5 @ VGS=4.0V ESD Protected. 20V 5A 30.0 @ VGS=3.7V 33.0 @ VGS=3.1V 38.0 @ VGS=2.5V D1 D2

Gre r r P Pr Pr Pro STS8207 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 34 @ VGS=4.0V Suface Mount Package. 36 @ VGS=3.7V 20V 4.5A ESD Protected. 40 @ VGS=3.1V 49 @ VGS=2.5V D1 D2 TSOT 26 Top View S1

Green Product STS8213 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16.0 @ VGS=4.0V Suface Mount Package. 16.5 @ VGS=3.7V 20V 7A ESD Protected. 18.0 @ VGS=3.1V 22.0 @ VGS=2.5V D1 D2 TSOT 26 Top View S1

Gre r r P Pr Pr Pro STS8201 a S mHop Microelectronics C orp. Ver 2.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20.0 @ VGS=4.5V Suface Mount Package. 21.0 @ VGS=4.0V ESD Protected. 20V 6A 21.5 @ VGS=3.7V 24.5 @ VGS=3.1V 29.5 @ VGS=2.5V D1 D2

Gre r r P Pr Pr Pro STS8212 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 14.5 @ VGS=4.5V Suface Mount Package. 15 @ VGS=4.0V ESD Protected. 20V 8A 15.5 @ VGS=3.7V 18 @ VGS=3.1V 22 @ VGS=2.5V D1 D2 TSOT