STS8235 Datasheet and Replacement. Cross Reference Search

..1. Size:166K samhop
sts8235.pdf pdf_icon

STS8235aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorF E ATUR E SPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).RDS(ON) (m) MaxVDSS IDR ugged and reliable.36 @ VGS=4.5VS urface Mount Package.30V 4.5A46 @ VGS=2.5VE S D Protected.D1 D2S OT26Top ViewS 1G161G 1G 2D1/D22 5 D1/D23

9.1. Size:179K samhop
sts8216.pdf pdf_icon

GreenProductSTS8216aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.20 @ VGS=4.0VSuface Mount Package.20V 6A27 @ VGS=2.5VESD Protected.D1 D2SOT 26Top ViewS1G161G 1G 2D1/D22 5 D1/D23

9.2. Size:105K samhop
sts8217.pdf pdf_icon

GrerrPPrPrProSTS8217aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.16.5 @ VGS=4.0VSuface Mount Package.17 @ VGS=3.7V24V 7AESD Protected.18 @ VGS=3.1V27 @ VGS=2.5VD1 D2TSOT 26Top ViewS1

9.3. Size:113K samhop
sts8202.pdf pdf_icon

GreenProductSTS8202aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.27 @ VGS=4.5VSuface Mount Package.28 @ VGS=4.0V ESD Protected.20V 5A 30 @ VGS=3.7V 33 @ VGS=3.1V 38 @ VGS=2.5V D1 D2 TSOT 26Top Vi

9.4. Size:106K samhop
sts8215.pdf pdf_icon

GrerrPPrPrProSTS8215aS mHop Microelectronics C orp.Ver 2.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.24.5 @ VGS=4.5VSuface Mount Package.25.5 @ VGS=4.0VESD Protected.20V 5.5A 27.5 @ VGS=3.7V30.5 @ VGS=3.1V36.5 @ VGS=2.5VD1 D

9.5. Size:106K samhop
sts8205.pdf pdf_icon

GrerrPPrPrProSTS8205aS mHop Microelectronics C orp.Ver 4.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.27.5 @ VGS=4.5VSuface Mount Package.28.5 @ VGS=4.0VESD Protected.20V 5A 30.0 @ VGS=3.7V33.0 @ VGS=3.1V38.0 @ VGS=2.5VD1 D2

9.6. Size:105K samhop
sts8207.pdf pdf_icon

GrerrPPrPrProSTS8207aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.34 @ VGS=4.0VSuface Mount Package.36 @ VGS=3.7V20V 4.5AESD Protected.40 @ VGS=3.1V49 @ VGS=2.5VD1 D2TSOT 26Top ViewS1

9.7. Size:111K samhop
sts8213.pdf pdf_icon

GreenProductSTS8213aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.16.0 @ VGS=4.0V Suface Mount Package.16.5 @ VGS=3.7V 20V 7AESD Protected.18.0 @ VGS=3.1V 22.0 @ VGS=2.5V D1 D2 TSOT 26Top ViewS1

9.8. Size:106K samhop
sts8201.pdf pdf_icon

GrerrPPrPrProSTS8201aS mHop Microelectronics C orp.Ver 2.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.20.0 @ VGS=4.5VSuface Mount Package.21.0 @ VGS=4.0VESD Protected.20V 6A 21.5 @ VGS=3.7V24.5 @ VGS=3.1V29.5 @ VGS=2.5VD1 D2

9.9. Size:105K samhop
sts8212.pdf pdf_icon

GrerrPPrPrProSTS8212aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14.5 @ VGS=4.5VSuface Mount Package.15 @ VGS=4.0VESD Protected.20V 8A 15.5 @ VGS=3.7V18 @ VGS=3.1V22 @ VGS=2.5VD1 D2TSOT

STS8235 Datasheet (PDF)

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