STS8235 Datasheet. Specs and Replacement

Type Designator: STS8235  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SOT26

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STS8235 datasheet

 ..1. Size:166K  samhop
 sts8235.pdf pdf_icon

STS8235

STS8235 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor F E ATUR E S PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). RDS(ON) (m ) Max VDSS ID R ugged and reliable. 36 @ VGS=4.5V S urface Mount Package. 30V 4.5A 46 @ VGS=2.5V E S D Protected. D1 D2 S OT26 Top View S 1 G1 6 1 G 1 G 2 D1/D2 2 5 D1/D2 3 ... See More ⇒

 9.1. Size:179K  samhop
 sts8216.pdf pdf_icon

STS8235

Green Product STS8216 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20 @ VGS=4.0V Suface Mount Package. 20V 6A 27 @ VGS=2.5V ESD Protected. D1 D2 SOT 26 Top View S1 G1 6 1 G 1 G 2 D1/D2 2 5 D1/D2 3 ... See More ⇒

 9.2. Size:105K  samhop
 sts8217.pdf pdf_icon

STS8235

Gre r r P Pr Pr Pro STS8217 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16.5 @ VGS=4.0V Suface Mount Package. 17 @ VGS=3.7V 24V 7A ESD Protected. 18 @ VGS=3.1V 27 @ VGS=2.5V D1 D2 TSOT 26 Top View S1... See More ⇒

 9.3. Size:113K  samhop
 sts8202.pdf pdf_icon

STS8235

Green Product STS8202 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27 @ VGS=4.5V Suface Mount Package. 28 @ VGS=4.0V ESD Protected. 20V 5A 30 @ VGS=3.7V 33 @ VGS=3.1V 38 @ VGS=2.5V D1 D2 TSOT 26 Top Vi... See More ⇒

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Detailed specifications: STT432S, STT3418, STT3414, STT10L01, STT100, STT08L01, STT06L01, STT04N20, IRF4905, STS8217, STS8216, STS8215, STS8213, STS8212, STS8207, STS8205, STS8202

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.