STS8235 PDF Specs and Replacement
Type Designator: STS8235
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Id| ⓘ - Maximum Drain Current: 4.5
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 12.5
nS
Cossⓘ -
Output Capacitance: 80
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036
Ohm
Package:
SOT26
-
MOSFET ⓘ Cross-Reference Search
STS8235 PDF Specs
..1. Size:166K samhop
sts8235.pdf 
STS8235 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor F E ATUR E S PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). RDS(ON) (m ) Max VDSS ID R ugged and reliable. 36 @ VGS=4.5V S urface Mount Package. 30V 4.5A 46 @ VGS=2.5V E S D Protected. D1 D2 S OT26 Top View S 1 G1 6 1 G 1 G 2 D1/D2 2 5 D1/D2 3 ... See More ⇒
9.1. Size:179K samhop
sts8216.pdf 
Green Product STS8216 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20 @ VGS=4.0V Suface Mount Package. 20V 6A 27 @ VGS=2.5V ESD Protected. D1 D2 SOT 26 Top View S1 G1 6 1 G 1 G 2 D1/D2 2 5 D1/D2 3 ... See More ⇒
9.2. Size:105K samhop
sts8217.pdf 
Gre r r P Pr Pr Pro STS8217 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16.5 @ VGS=4.0V Suface Mount Package. 17 @ VGS=3.7V 24V 7A ESD Protected. 18 @ VGS=3.1V 27 @ VGS=2.5V D1 D2 TSOT 26 Top View S1... See More ⇒
9.3. Size:113K samhop
sts8202.pdf 
Green Product STS8202 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27 @ VGS=4.5V Suface Mount Package. 28 @ VGS=4.0V ESD Protected. 20V 5A 30 @ VGS=3.7V 33 @ VGS=3.1V 38 @ VGS=2.5V D1 D2 TSOT 26 Top Vi... See More ⇒
9.4. Size:106K samhop
sts8215.pdf 
Gre r r P Pr Pr Pro STS8215 a S mHop Microelectronics C orp. Ver 2.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 24.5 @ VGS=4.5V Suface Mount Package. 25.5 @ VGS=4.0V ESD Protected. 20V 5.5A 27.5 @ VGS=3.7V 30.5 @ VGS=3.1V 36.5 @ VGS=2.5V D1 D... See More ⇒
9.5. Size:106K samhop
sts8205.pdf 
Gre r r P Pr Pr Pro STS8205 a S mHop Microelectronics C orp. Ver 4.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27.5 @ VGS=4.5V Suface Mount Package. 28.5 @ VGS=4.0V ESD Protected. 20V 5A 30.0 @ VGS=3.7V 33.0 @ VGS=3.1V 38.0 @ VGS=2.5V D1 D2 ... See More ⇒
9.6. Size:105K samhop
sts8207.pdf 
Gre r r P Pr Pr Pro STS8207 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 34 @ VGS=4.0V Suface Mount Package. 36 @ VGS=3.7V 20V 4.5A ESD Protected. 40 @ VGS=3.1V 49 @ VGS=2.5V D1 D2 TSOT 26 Top View S1... See More ⇒
9.7. Size:111K samhop
sts8213.pdf 
Green Product STS8213 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16.0 @ VGS=4.0V Suface Mount Package. 16.5 @ VGS=3.7V 20V 7A ESD Protected. 18.0 @ VGS=3.1V 22.0 @ VGS=2.5V D1 D2 TSOT 26 Top View S1... See More ⇒
9.8. Size:106K samhop
sts8201.pdf 
Gre r r P Pr Pr Pro STS8201 a S mHop Microelectronics C orp. Ver 2.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20.0 @ VGS=4.5V Suface Mount Package. 21.0 @ VGS=4.0V ESD Protected. 20V 6A 21.5 @ VGS=3.7V 24.5 @ VGS=3.1V 29.5 @ VGS=2.5V D1 D2 ... See More ⇒
9.9. Size:105K samhop
sts8212.pdf 
Gre r r P Pr Pr Pro STS8212 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 14.5 @ VGS=4.5V Suface Mount Package. 15 @ VGS=4.0V ESD Protected. 20V 8A 15.5 @ VGS=3.7V 18 @ VGS=3.1V 22 @ VGS=2.5V D1 D2 TSOT ... See More ⇒
Detailed specifications: STT432S
, STT3418
, STT3414
, STT10L01
, STT100
, STT08L01
, STT06L01
, STT04N20
, IRF9540
, STS8217
, STS8216
, STS8215
, STS8213
, STS8212
, STS8207
, STS8205
, STS8202
.
Keywords - STS8235 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.